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Advanced Memory and Computing

Phase Change Memory,Resistive Random-Access Memory,Vertically Stackable 3D Cross-point Memory,Multi-bit Storage,Universal Memory,Vector Matrix Multiplier,Neuromorphic computing

IRIS Webinar

Today’s computing systems use a hierarchy of volatile and non-volatile data storage devices to achieve an optimal trade-off between cost and performance. Conventional Silicon based logic circuits and semiconductor memory devices have been able to meet the extremely high and ever-increasing demand for faster computing in the past by geometrical scaling and recently by innovations in materials and device architectures. Nevertheless, it is rapidly becoming almost impossible to continue on its performance improvement as the "transistor," the basic building block of almost all modern electronics, is rapidly approaching their scaling limits and escalating cost of development.

  • All well-established memory technologies have certain shortcomings: DRAMs are volatile and owing to that require standby power.

  • Flash memories are non-volatile; however, they exhibit limited write endurance and low write speed. SRAMs can be very fast, but they are volatile and have large cell sizes.

  • There is a pressing need, therefore, to develop new non-volatile memory technologies, which overcome these shortcomings and combine promising features of non-volatility with high speed, high write endurance and small feature size for high speed computing.

Advanced Memory and Computing

Anbarasu Manivannan

Principal Investigator

People

Anbarasu Manivannan

Area of Interest

Anbarasu Manivannan

Principal investigator

Electrical Engineering

anbarasu@ee.iitm.ac.in
Amitava DasGupta

Area of Interest

Amitava DasGupta

Co-Principal investigator

Electrical Engineering

adg@ee.iitm.ac.in
Anjan Chakravorty

Area of Interest

Anjan Chakravorty

Co-Principal investigator

Electrical Engineering

anjan@ee.iitm.ac.in
Bhaswar Chakrabarti

Area of Interest

Bhaswar Chakrabarti

Co-Principal investigator

Electrical Engineering

bchakrabarti@iee.iitm.ac.in
Deleep Nair

Area of Interest

Deleep Nair

Co-Principal investigator

Electrical Engineering

deleep@ee.iitm.ac.in
Enakshi Bhattacharya

Area of Interest

Enakshi Bhattacharya

Co-Principal investigator

Electrical Engineering

enakshi@ee.iitm.ac.in
K. Sethupathi

Area of Interest

K. Sethupathi

Co-Principal investigator

Physics

ksethu@iitm.ac.in
M. S. R. Rao

Area of Interest

M. S. R. Rao

Co-Principal investigator

Physics

msrrao@iitm.ac.in
Shreepad Karmalkar

Area of Interest

Shreepad Karmalkar

Co-Principal investigator

Electrical Engineering

karmal@ee.iitm.ac.in
Soumya Datta

Area of Interest

Soumya Datta

Co-Principal investigator

Electrical Engineering

s.datta@ee.iitm.ac.in

Project

The technology roadmap of PCM and RRAM have been projected for the next 10 years by keeping in view of some of the key challenges with the existing Von Neumann architectural framework for high speed computing. A number of possible solutions have been systematically outlined below.

Expected deliverables of the research

  • Custom-designed state-of-the art advanced memory testing facility.
  • Novel materials design for high speed NVRAM.
  • Ultrafast switching dynamics using insitu measurements in ps-timescale.
  • Physics of switching mechanism reliable phase transformation.
  • Demonstration of proto-type PCM and RRAM cells with ns/sub-ns programming capabilities.

Current status

Facilities established:

  • Custom-designed state-of-the art facility for advanced memory testing and - characterization.
  • Multi-target RF/DC Magnetron sputtering deposition systems
  • Temperature dependent resistivity (van der Pauw) measurement setup. Memory array tester.

Collaborations

International collaborators

  • Prof. Dr. Matthias Wuttig
    • Chair, Institute of Physics (I.A.), RWTH Aachen University
    • Email
    • Webpage
    • Expertise: Phase change materials, Metavalent bonding, novel materials by design
  • Prof. Dr. Riccardo Mazzarello
    • Department of Physics, Sapienza University of Rome
    • Email
    • Webpage
    • Expertise: Computational materials science, phase change materials, ab-inito, MD simulations
  • Prof. Dr. Ritesh Agarwal
    • Department of Materials Science and Engineering, University of Pennsylvania
    • Email
    • Webpage
    • Expertise: Phase change nanowires, nanoscale photonics
  • Prof. Dr. Harish Bhaskaran
    • Department of Materials, University of Oxford
    • Email
    • Webpage
    • Expertise: Phase change mateials, photonic computing, NEMS and nanometrology
  • Subramanian Sankaranarayanan
    • Associate Professor, University of Illinois Chicago, Argonne National Laboratory
    • Email
    • Webpage
    • Expertise: Molecular-Dynamics Simulation,Machine learning for Materials Discovery
  • Anand Raghunathan
    • Professor,Purdue University
    • Email
    • Webpage
    • Expertise: Neuromorphic computing Non Von-Neumann architecture
  • Supratik Guha
    • Professor,University of Chicago
    • Email
    • Webpage
    • Expertise: Oxide thin films, High-k dielectrics
  • International workshop on non-volatile memory technologies (planned)
  • International workshop on neuromorphic systems with emerging technologies (planned)

Industrial collaborations

  • Micron Technology Inc.
  • Western Digital

    Societal impact

There is an exponentially increasing demand for digital storage in portable electronic products and advancement in several key areas including the Internet of things (IoTs) has enabled interactions among several electronic devices require huge amounts of interconnected data which demands high storage density and also better processing speed of memory. This could be accomplished by a large capacity, high-speed non-volatile memory with customizable products meeting various requirements in the knowledge and information based society.

Therefore, emerging memory technologies play a vital role in various key developments including smart sensors; embedded systems, multimedia and computing devices require devices with tailored specifications. Hence, meeting such advanced electronics as part of Digital era, requisite appropriate facilities enabling societal impact relevant to customizable advanced memory though CSR funding with the support of semiconductor manufacturers including Micron Technology Inc., Western Digital and such provisions will be explored based on the merits on the innovation and research involved in advanced memory technology and appropriate schemes will be sketched through CSR funding in short, medium and long term goals.

Sustenance statement

The proposed Centre will make the following steps strategically to ensure sustenance of the Centre including maintenance and operation of equipment, periodic inspection of equipment, spares, consumables, and technical support staff.

  • External funding through Industry sponsored projects as many of the key research problems addressed by the Centre is based on the Industry need, and therefore through sustained interactions with industry considerable grant will be made available throughout.
  • Sponsored projects on advanced memory and computing technologies from SERB, Nanomission, Meity, ISRO, DRDO, DAE, CSIR etc., will allow constant support to meet the need of sustenance, in addition to achieving the proposed objectives of sponsored projects.
  • Industrial consultancy, with Micron and Western Digital on specific expertise will allow required support.
  • Conducting workshops and CEP programs on emerging electronics.
  • Designing Industry requirement based on-line courses, as well as Masters program. Submitting proposals for bilateral programs as well as international funding agencies through special schemes, such as UKIERI, SPARC, Indo-Japan, Indo-US, Indo-German bilateral programs through International collaborators as part of proposed CoE